In this rapidly advancing field, this workshop provides a premier platform for reporting recent advances in materials, device and circuit development and identify major scientific gaps. The intent is to create actionable coordination across government, industry and academia to enable rapid transitional technologies in this field. There will be no written proceedings to facilitate a friendly and stimulating environment for scientific discussions among participants from domestic and international Ga2O3 research groups. Attendees can expect topics including, but not limited to: bulk and epitaxial growth, theory/modeling/simulations, device and circuit advancements, materials characterization and novel properties, thermal management, electro-thermal codesign and heterostructures.

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    Novel Crystal Technology, Inc., Japan

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    University at Buffalo, USA

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    University of California, Santa Barbara, USA

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    Yoshinao Kumagai

    Tokyo University of Agriculture and Technology, Japan

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    John McCloy

    Washington State University, USA

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    Adam Neal

    Air Force Research Laboratory, USA

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    Andreas Popp

    Leibniz-Insitut für Kristallzüchtung, Germany

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    Siddharth Rajan

    The Ohio State University, USA

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    Steven Ringel

    The Ohio State University

    USA

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    Jim Speck

    University of California, USA

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    Jiandong Ye

    Nanjing University, China

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