Ga2O3 Materials: Current Status and Future Prospects
Fifteen years have passed since I started development of β-Ga2O3 crystal growth technique and power devices. In the early stages of our research, we prototyped MESFETs or SBDs using extremely small epitaxial wafers of about 4 mm square or less that were fabricated using the floating zone method and the molecular beam epitaxy. We have now reached the stage of mass production of 4-inch wafers by using the edge-defined film fed growth (EFG) method and halide vapor phase epitaxy (HVPE) method. And we are also preparing for mass production of β-Ga2O3 SBDs using 4-inch process foundry.