Plenary Speakers

Fifteen years have passed since I started researching gallium oxide power devices. In the early stages of our research, we prototyped MESFETs or SBDs using extremely small epitaxial wafers of about 4 mm square or less that were fabricated using the floating zone method and the MBE method. We have now reached the stage of mass production of 4-inch wafers by using the EFG and HVPE methods. In the future, larger diameter and lower cost will be required. In this talk, I would like to look back on the past and discuss the current situation and future prospects.

Control of doping is essential for devices.  First-principles calculations provide key insights and guidance.

This first decade of monoclinic Ga 2 O 3 device research has been incredible (underpinned by the availability of large area bulk substrates) in breakdown voltages, power device figure of merit and high-speed performance. It has emerged as a promising ultra-widebandgap semiconductor for next generation power, GHz switching and RF applications. In this talk, we will provide the status and challenges that needs to be addressed before this technology can be used in the field.